Effect of AlGaAs-(AlGa) x O y pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots
| Autor: | Mikhail V. Maximov, Nikolai N. Ledentsov, K. V. Fedorova, V. M. Ustinov, A. M. Nadtochy, N. V. Kryzhanovskaya, S. A. Blokhin, Dieter Bimberg, A. E. Zhukov, N. D. Il’inskaya |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Substrate (electronics) Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Pedestal law Quantum dot Q factor Optoelectronics Emission spectrum Whispering-gallery wave business Lasing threshold |
| Zdroj: | Semiconductors. 45:962-965 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782611070116 |
| Popis: | Effect of parameters of the AlGaAs-(AlGa)xOy layer forming the pedestal of a microdisk laser with an active region based on InAs/InGaAs quantum dots on specific features of the emission spectrum at a temperature of 15 K under optical excitation has been studied. A decrease in the oxidation depth of the Al0.97Ga0.03As layer results in a decrease in the intensity of “whispering gallery mode” lines; simultaneously, the lasing threshold becomes higher and the Q factor is diminished by increased leakages into the substrate region. |
| Databáze: | OpenAIRE |
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