Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses
| Autor: | Yeong-Her Wang, Chou Sern Wang, Mau-Phon Houng, Hou Kuei Huang |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Chemistry
business.industry Schottky barrier Direct current Electrical engineering Schottky diode High-electron-mobility transistor Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Reverse leakage current Depletion region Gate oxide Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business Current density |
| Zdroj: | Microelectronics Reliability. 46:2025-2031 |
| ISSN: | 0026-2714 |
| Popis: | The behavior of Schottky gate characteristics before and after hot-electron stress has been a relatively neglected topic. Thus, this paper discussed the effects of hot-electron accelerated stress on the DC characteristics of AlGaAs/InGaAs/GaAs PHEMTs as they relate to Schottky gate characteristics. It also presents studies of reverse Schottky gate characteristics before and after hot-electron stresses, as related to two major mechanisms: (1) the widening of the depletion region under the gate; and (2) the impact of the carriers trapped under the gate. The former induces a larger Schottky barrier height with a smaller reverse leakage current density than the latter, while the latter induces the opposite. Two hot-electron conditions are used to investigate the impact of the hot-electron stress on the gate leakage current. The gate leakage current decreases after a hot-electron stress, due the effect of hot-electron stress on the Schottky diode characteristics. Moreover, improvement in the noise performance is expected, due to the decrease in the gate leakage current. Both pre- and post-stress noise measurements have been done to demonstrate this. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect