Analysis of Ion-Induced SEFI and SEL Phenomena in 90 nm NOR Flash Memory

Autor:	Hong-Xia Guo, Fengqi Zhang, Zhang Hong, Xiaoyu Pan, Jinshun Bi, Zhong Xiangli, Lili Ding, Ju An'an
Rok vydání:	2021
Předmět:	Physics Nuclear and High Energy Physics business.industry Linear energy transfer Transient analysis Transient current Flash memory Ion Non-volatile memory Flash (photography) Nuclear Energy and Engineering Optoelectronics Electrical and Electronic Engineering business
Zdroj:	IEEE Transactions on Nuclear Science. 68:2508-2515
ISSN:	1558-1578 0018-9499
Popis:	This article mainly focuses on the single event function interruption (SEFI) and single event latch-up (SEL) of 90 nm NOR flash memories. Devices were irradiated by ions with different linear energy transfer (LET) values from 12.9 to $65.8~MeV\cdot cm^{2}$ /mg. SEFI observed in the device is further divided into bit SEFI, column SEFI, and sector SEFI by severity of data corruption. Under irradiation with low LET value ions, SEL propagation-like phenomena were observed in this work, which was recognized as the process from local latch-up to global latch-up in the peripheral circuits. The underlying mechanisms for SEFI and SEL in NOR flash are discussed. Results indicate that the radiation-induced transient current should be responsible for SEFI, and different forms of SEFI depend on in which part of the circuit that transient current occurred. Besides, SEL in NOR flash is considered to be triggered from the peripheral circuits.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5f584e24b2cfae21121c90fcd98673f0 https://doi.org/10.1109/tns.2021.3105998 Zobrazit plný text záznamu