Photoelectrochemical Analysis of Doped Hydrogenated Amorphous Silicon
| Autor: | M. T. Spitler, J. D. Cary |
|---|---|
| Rok vydání: | 1989 |
| Předmět: |
Photocurrent
Amorphous silicon Materials science Dopant Silicon Renewable Energy Sustainability and the Environment business.industry Doping Photoelectrochemistry Nanocrystalline silicon Mineralogy chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Amorphous carbon Materials Chemistry Electrochemistry Optoelectronics business |
| Zdroj: | Journal of The Electrochemical Society. 136:2295-2299 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2097308 |
| Popis: | Photoelectrochemical techniques have been employed in an analysis of p‐ and n‐doped, hydrogenated amorphous silicon (a‐Si) and hydrogenated amorphous silicon carbide alloy films . Materials with a range of doping densities were examined. Flatband potentials of n a‐Si and electrodes were determined and used to predict the maximum photovoltage attainable from a composite p‐i‐n structure made from these films. Energy gaps for optical absorption and photocurrent production were also measured, and the relationship of the energy gap for photocurrent to the mobility gap of these materials is discussed. An optical interference effect in these thin film electrodes was used to deduce the effective doping density of the n‐type materials. Electrochemical measures have been established to quantify the extent of defects in the films caused by the low doping efficiencies of the dopant gases. |
| Databáze: | OpenAIRE |
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