Silicon-containing resists for 157-nm applications

Autor: Gregory M. Wallraff, Robert D. Allen, Debra Fenzel-Alexander, Nicolette Fender, Ratnam Sooriyakumaran
Rok vydání: 2001
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.436861
Popis: We have designed and developed an aqueous base soluble polymer system with a silsequioxane (SSQ) backbone for 157nm bilayer resist applications. These base resins have absorbances as low as 0.6micrometers -1 at 157nm. The imagable polymers which contain acid-labile ester functionalities have absorbances between 2.0 and 3.0micrometers -1. The silicon content of these polymers is around 15% by weight. Therefore, our polymers can be utilized in 157nm positive bilayer resist applications with a film thickness of around 150nm. We have evaluated several resist formulations based on these polymers. These resist formulations have shown high contrast and excellent resolution.
Databáze: OpenAIRE