Free-standing and vertically aligned InP nanowires grown by metalorganic vapor phase epitaxy
| Autor: | Seiji Fujikawa, Satyaban Bhunia, Yoshio Watanabe, Tomoaki Kawamura, K. Tokushima |
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| Rok vydání: | 2004 |
| Předmět: |
Photoluminescence
Materials science business.industry Scanning electron microscope Nanowire Nanotechnology Condensed Matter Physics Epitaxy Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Blueshift Optoelectronics Wafer Metalorganic vapour phase epitaxy Vapor–liquid–solid method business |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 21:583-587 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/j.physe.2003.11.083 |
| Popis: | Metalorganic vapor phase epitaxial technique has been used to grow surface mounted vertical and uniform cross-sectional InP nanowires on a wafer scale basis. The growth was carried out under the vapor–liquid–solid mechanism using Au colloidal nanoparticles of nominal diameters of 10 and 20 nm , and their properties were compared. The effect of the pre-growth anneals and growth temperatures on the stability of the nanowires were studied in detail. Scanning electron microscopy and transmission electron microscopic studies showed average diameter of the nanowires in the range of 20– 35 nm , and of length 700 nm with growth direction of 〈1 1 1〉 . Room temperature photoluminescence measurements of the nanowires grown on 10 and 20 nm Au particles showed strong peaks, which were blue shifted by 25 and 32 meV , respectively, compared to bulk InP. |
| Databáze: | OpenAIRE |
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