Rapid thermal annealing of arsenic and boron‐implanted silicon

Autor:	George A. Rozgonyi, Volkan H. Ozguz, O. W. Holland, R. E. Eby, J. J. Wortman, Jagdish Narayan
Rok vydání:	1983
Předmět:	Fabrication Materials science Physics and Astronomy (miscellaneous) Silicon Dopant Annealing (metallurgy) chemistry.chemical_element Crystallographic defect Crystallography Ion implantation chemistry Composite material Boron Arsenic
Zdroj:	Applied Physics Letters. 43:957-959
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.94200
Popis:	Annealing of ion implantation damage and concomitant electrical activation of dopants, depth profiles, and lattice location of dopants have been studied in arsenic and boron‐implanted specimens after rapid thermal annealing. A ‘‘complete’’ annealing of displacement damage with full electrical activation of dopants and profile broadening less than 100 A can be attained for shallow implants whereas some extended defects are retained for deep implants. Mechanisms of rapid thermal annealing and its implications in solid state device fabrication are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5f36a6bbbad7e5f2dce2010b2743b07c https://doi.org/10.1063/1.94200 Zobrazit plný text záznamu