Use of Substituted Bis(acetylacetone)ethylenediimine and Dialkyldithiocarbamate Ligands for Copper Chelation in Supercritical Carbon Dioxide
| Autor: | Laurel L. Grotzinger, Susan D. Thai, Carol A. Bessel, Dorothy W. Skaf, Ginger M. Denison, Walter J. Boyko, Andrew Dunbar, Donna M. Omiatek, Christopher E. Kendrex, Randy D. Weinstein, Joseph M. DeSimone |
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| Rok vydání: | 2006 |
| Předmět: | |
| Zdroj: | Industrial & Engineering Chemistry Research. 45:8779-8787 |
| ISSN: | 1520-5045 0888-5885 |
| DOI: | 10.1021/ie060947v |
| Popis: | Chemical−mechanical planarization (CMP) is a process of oxidizing and chelating the copper overburden present in an interconnect device while mechanically polishing the surface of the wafer. Because the use of condensed CO2 as the solvent for CMP would be environmentally and technically advantageous, several substituted bis(acetylacetonate)ethylenediimine (R4BAE, where R = CH3 or CF3) and lithium or sodium dialkyldithiocarbamate (M+(R2DTC-), where M+ = Li+ or Na+ and R = ethyl, n-propyl, n-butyl, or 1,1,1-trifluoroethyl) ligands were used with t-butylperacetate (t-BuPA, as oxidant) for the oxidative dissolution of copper(0) in supercritical (sc) CO2 at 40 °C and 170−210 bar or in hexanes at 40 °C and atmospheric pressure. The reaction products from the copper etching were determined to be Cu(R4BAE) or Cu(R2DTC)2, respectively. The R2DTC- ligands had higher etch rates than the R4BAE ligands with comparable substituents, and the lithium dialkyldithiocarbamate salts gave higher copper etching rates than thei... |
| Databáze: | OpenAIRE |
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