Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range
| Autor: | Thales Augusto Ribeiro, Antonio Cerdeira, Rodrigo T. Doria, Magali Estrada, Marcelo Antonio Pavanello, Fernando Avila-Herrera |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Computer simulation business.industry Circuit design Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Model validation 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Nanowire transistors Electrical and Electronic Engineering Triple gate 0210 nano-technology business Drain current |
| Zdroj: | Solid-State Electronics. 159:116-122 |
| ISSN: | 0038-1101 |
| Popis: | This paper presents the extension of proposed physically-based continuous compact analytical model of triple gate junctionless nanowire transistors for accurate description of device electrical characteristics in a wide temperature range from room temperature up to 500 K. The model validation is performed by comparison against tridimensional numerical simulation and experimental data showing very good agreement, with continuous description of drain current and its derivatives in all regions of operation and temperatures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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