ECR-MOCVD of the Ba-Sr-Ti-O system below 400°C. Part I: Processing
| Autor: | Sandwip Dey, Prasad V. Alluri, Prashant Majhi, Derek Tang |
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| Rok vydání: | 1998 |
| Předmět: |
Permittivity
Materials science Analytical chemistry Nucleation Chemical vapor deposition Condensed Matter Physics Electron cyclotron resonance Grain size Electronic Optical and Magnetic Materials Control and Systems Engineering Materials Chemistry Ceramics and Composites Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Thin film Ohmic contact |
| Zdroj: | Integrated Ferroelectrics. 21:305-318 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584589808202072 |
| Popis: | SrTiO3 (or ST) and (Ba, Sr)TiO3 (or BST) thin films were deposited on Pt passivated Si substrates below 400°C, using β-diketonates of Ba, Sr, and Ti, electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (CVD), and direct liquid injection system. Reported here are results from various thin-film characterization techniques including TEM and SEM. To optimize the processing parameters with respect to phase purity, Sr/Ti ratio, and permittivity, the method of design of experiments was implemented. The as-deposited (at 390°C), unannealed ST films exhibited a permittivity of 120 and an ohmic contact with the bottom Pt electrode. The former was attributed to the small grain size (150–200 a) and presence of Sr rich second phases. The latter was related to the observed incubation period at the initial nucleation stages of film growth. |
| Databáze: | OpenAIRE |
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