Hall experiments and interpretation in a-Si:H and a-SiC:H
| Autor: | R. A. Street, C. E. Nebel |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Amorphous silicon
Electron mobility Silicon Condensed matter physics Doping chemistry.chemical_element Mineralogy Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound chemistry Hall effect Materials Chemistry Ceramics and Composites Anomaly (physics) Carbon |
| Zdroj: | Journal of Non-Crystalline Solids. :449-452 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(93)90586-m |
| Popis: | Hall data obtained on intrinsic, phhosphorus and boron doped a-Si:H and a-SiC:H in the temperature regime 200 K ⩽ T ⩽ 400 K are introduced and discussed. The data confirm double sign anomaly. The Hall mobilities, μ H , are significantly smaller than the drift mobilities, decreasing with increasing with increasing doping and/or carbon content. μ H of holes is about half that for electrons which indicates that μ H scales approximately with 1/E s , where E s is the tail slope. The presented interpretation of the Hall coefficient, that is introduced to be a function of Hall-and drift-mobility, enables the accurate determination of the carrier density in intrinsic and doped amorphous silicon and alloys from Hall data. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|