Porous Silicon: A Buffer Layer for PbS Heteroepitaxy

Autor:	V. Yakovtseva, L. Postnova, N. Vorozov, Vitaly Bondarenko, V. Ferrara, V. Levchenko, L. Dolgyi, Marco Balucani, Aldo Ferrari, G. Lamedica
Rok vydání:	2000
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Porous silicon Epitaxy Buffer (optical fiber) Electronic Optical and Magnetic Materials Photodiode law.invention chemistry law Optoelectronics business Layer (electronics)
Zdroj:	physica status solidi (a). 182:195-199
ISSN:	1521-396X 0031-8965
Popis:	In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n+-type silicon (111) substrate. The films were comparable with films grown on BaF2 substrates. Beneficial influence of a PS buffer layer on the structure and properties of PbS epitaxial films was supported by implementation of sensitive Schottky-barrier photodiodes fabricated in these films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5f22750a978862918a22978e6995607e https://doi.org/10.1002/1521-396x(200011)182:1<195::aid-pssa195>3.0.co Zobrazit plný text záznamu Plný text