First synthesis of In-doped vanadium pentoxide thin films and their structural, optical and electrical characterization
| Autor: | Sh. Tabatabai Yazdi, R. Pilevar Shahri, S. Shafei |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Band gap Scanning electron microscope Mechanical Engineering Doping Nucleation Analytical chemistry Vanadium chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences chemistry Mechanics of Materials Pentoxide General Materials Science Nanorod Crystallite 0210 nano-technology |
| Zdroj: | Materials Science and Engineering: B. 263:114755 |
| ISSN: | 0921-5107 |
| Popis: | Indium-doped vanadium pentoxide thin films with different doping levels up to 30 at.% were prepared by spray pyrolysis technique on glass substrates of 430 °C and characterized by X-ray diffraction, scanning electron microscopy, UV–Vis spectroscopy and Hall effect measurements. The results revealed the nanorod- and nanobelt-shaped particles with the average width of 60–120 nm composed of tetragonal β-V2O5 phase. Indium introduction made the structure more disordered and decreased the crystallite size from 25 to 11 nm due to the increased nucleation centers. In-doping resulted in an increase in the transparency of the films and a blue shift in their band gap energy from 2.7 to 3.6 eV due to the dominant size effects. All the films are n-type semiconductors whose electron concentration decreased because of substitution of lower valence In3+ for V5+, while their resistivity increased on In-doping as a result of the enhanced structural disorder. |
| Databáze: | OpenAIRE |
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