Etch-stop process for precisely controlling the vertical cavity length of GaN-based devices
| Autor: | Tsung-Che Wu, Pinghui S. Yeh, Yen-Yu Liu |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Flatness (systems theory) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Laser 01 natural sciences law.invention Vertical-cavity surface-emitting laser Mechanics of Materials law Etching (microfabrication) Chemical-mechanical planarization 0103 physical sciences Optoelectronics General Materials Science Wafer Inductively coupled plasma 0210 nano-technology business Layer (electronics) |
| Zdroj: | Materials Science in Semiconductor Processing. 120:105265 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2020.105265 |
| Popis: | In this study, an etch-stop process was developed using inductively coupled plasma reactive-ion etching for precisely controlling the vertical cavity length of GaN-based devices, such as vertical-cavity surface-emitting lasers (VCSELs) and VCSEL 2D arrays. An AlN layer, which was the etch-stop layer, was added to the epitaxial structure for defining the bottom of a vertical cavity. A uniform vertical cavity length was thus obtained across the entire wafer. Consequently, the flatness of the bottom-end facet was determined from the quality of epitaxial growth rather than the quality of chemical mechanical polishing. The surface morphologies of the wafer in various processing stages were also inspected and compared. |
| Databáze: | OpenAIRE |
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