Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN
| Autor: | Markus Weyers, Andrea Dittmar, Uta Juda, Carsten Netzel, Jürgen Wollweber, Carsten Hartmann, Arne Knauer, Anna Mogilatenko, Jörg Jeschke, Ralph-Stephan Unger, Matthias Bickermann, Ute Zeimer |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry Crystal 0103 physical sciences Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Dislocation 0210 nano-technology business |
| Zdroj: | Journal of Crystal Growth. 505:69-73 |
| ISSN: | 0022-0248 |
| Popis: | MOVPE growth of AlN layers on bulk AlN substrates with low threading dislocation density ( |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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