Tritiation of amorphous and crystalline silicon using T2 gas

Autor:	Nazir P. Kherani, Stefan Zukotynski, Baojun Liu, Tome Kosteski, Armando B. Antoniazzi, Kevin P. Chen, Stefan Costea
Rok vydání:	2006
Předmět:	Amorphous silicon Materials science Physics and Astronomy (miscellaneous) Silicon Hydrogen Nanocrystalline silicon Analytical chemistry chemistry.chemical_element Amorphous solid chemistry.chemical_compound chemistry Tritium Surface layer Crystalline silicon Nuclear chemistry
Zdroj:	Applied Physics Letters. 89:044104
ISSN:	1077-3118 0003-6951
Popis:	Incorporation of tritium in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) at 250°C using tritium (T2) gas at pressures of up to 120atm is reported. The tritium is stored in a surface layer which is approximately 150 and 10nm for a-Si:H and c-Si, respectively. The concentration of tritium occluded in planar and textured c-Si is linearly dependent on the total surface area. The tritium is stable and the dominant tritium evolution occurs at temperatures above 300°C. The concentration of tritium locked in a-Si:H and c-Si was 20 and 4at.%, respectively. Self-catalysis appears to be important in the tritiation process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5f05a4ca3398fe5334eadd1909b3d22f https://doi.org/10.1063/1.2234844 Zobrazit plný text záznamu