Photoluminescence characterization of MBE grown AlGaAs/InGaAs/GaAs pseudomorphic HEMTs

Autor:	M. Wojtowicz, D. Pascua, T.R. Block, D.C. Streit, A. C. Han
Rok vydání:	1997
Předmět:	Photoluminescence Condensed matter physics Chemistry Doping Heterojunction High-electron-mobility transistor Condensed Matter Physics Molecular physics Inorganic Chemistry Materials Chemistry Poisson's equation Electronic band structure Envelope (waves) Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. :930-934
ISSN:	0022-0248
Popis:	We compare the experimental and theoretical photoluminescence (PL) spectra of power and low-noise pseudomorphic AlGaAs InGaAs high electron mobility transistor (HEMT) profiles. The modeling approach uses a self-consistent solution between Schrodinger equation and Poisson's equation to calculate the electron and hole energy levels, envelope functions, and concentrations. Results are in good agreement with 4.2 K photoluminescence measurements. PL spectra of the HEMTs show two peaks due to transitions between the e1-hh1 and e2-hh1 channel states. For the low-noise profile, the intensity of the e2-hh1 transition is greater than the e1-hh1 transition intensity while for the power profile, the e1-hh1 transition intensity is greater. The difference in intensities between the low-noise and power profiles is due to differences in the doping of the profiles.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5f0243578cfea441f79a9c763d3db506 https://doi.org/10.1016/s0022-0248(96)01222-5 Zobrazit plný text záznamu Full Text from ScienceDirect