Electrical characteristics of MeV Si-implanted and annealed GaAs
| Autor: | S. Sen, L.C. Burton |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Deep level business.industry Quantitative Biology::Tissues and Organs Physics::Medical Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Dynamic annealing Computer Science::Programming Languages Optoelectronics Rapid thermal annealing business Instrumentation Layer (electronics) |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 71:392-398 |
| ISSN: | 0168-583X |
| Popis: | The effects of MeV Si implantation followed by RTA (rapid thermal annealing) on the electrical characteristics of GaAs are reported. MeV Si implantation and RTA generates active buried layers in GaAs. The buried layer quality is found to be at least comparable to a similarly processed keV Si-implanted active GaAs layer. The deep traps in MeV-implanted GaAs are identified and explained in terms of their probable origins. The deep level behavior of MeV Si-implanted and RTA GaAs is distinctly different from keV Si-implanted and RTA GaAs. This difference is attributed to the dynamic annealing occurring during MeV implantation. |
| Databáze: | OpenAIRE |
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