Current Transport Mechanism of High-Performance Novel GaN MIS Diode
| Autor: | Xiangdong Li, Yue Hao, Tao Zhang, Yueguang Lv, Jincheng Zhang, Yanni Zhang |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Schottky barrier Wide-bandgap semiconductor Schottky diode Gallium nitride Thermionic emission 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences Electrical and Electronic Engineering Quantum tunnelling Diode Leakage (electronics) |
| Zdroj: | IEEE Electron Device Letters. 42:304-307 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2021.3051690 |
| Popis: | In this work, we report a high-performance lateral GaN metal-insulator-semiconductor (MIS) diode with a low turn-on voltage (VON) of 0.32 V. Both in-depth theoretical calculations on current transport mechanisms and a forward conduction model are demonstrated. Based on the calculation results, the direct tunneling (DT) and thermionic emission (TE) coexist as the forward conduction mechanism, contributing to this low subthreshold swing (SS). Furthermore, a 1.8 nm thick Al2O3 interlayer increases the equivalent Schottky barrier height ( $\Phi _{\text {B}}$ ) which effectively suppresses the reverse leakage to $4.5\times 10^{-{4}}$ mA/mm at room temperature. |
| Databáze: | OpenAIRE |
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