Hysteresis suppression improvement of polycrystalline silicon thin-film transistors by two-step hydrogenation
| Autor: | Wj Hwang Wook-Jung Hwang, Cw Ahn Chi Won Ahn, J-M Yang, Hs Seo Hyun-Sang Seo, Ys Kim Young-Su Kim, Is Kang Il-Suk Kang |
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| Rok vydání: | 2011 |
| Předmět: |
Silicon
Hydrogen Passivation Annealing (metallurgy) business.industry Transistor General Physics and Astronomy chemistry.chemical_element engineering.material Oxide thin-film transistor law.invention Polycrystalline silicon chemistry Thin-film transistor law engineering Optoelectronics General Materials Science business |
| Zdroj: | Current Applied Physics. 11:1319-1321 |
| ISSN: | 1567-1739 |
| DOI: | 10.1016/j.cap.2011.03.067 |
| Popis: | The effect of two-step hydrogenation, consisting of plasma hydrogenation and annealing in hydrogen, on the hysteresis phenomenon of metal-induced unilaterally crystallized silicon thin-film transistors (MIUC-Si TFTs) was investigated. The large hysteresis level of the conventional MIUC-Si TFTs caused a wide variation of the drain current with the previous gate voltage. As the plasma exposure time increased, the plasma hydrogenation commonly used for stability in poly-Si TFTs was found to increase the hysteresis level of MIUC-Si TFTs after a minimum point. This is because plasma-induced damages correlated with unique defects of MIUC-Si such as metal-related weak bonds, are accompanied by passivation. The following annealing repaired the damages. Consequently the hysteresis level was lower, which resulted in a narrower variation of the drain current. |
| Databáze: | OpenAIRE |
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