Edge‐emitting quantum well heterostructure laser diodes with auxiliary native‐oxide vertical cavity confinement

Autor:	E. I. Chen, Steven A Maranowski, P. W. Evans, Nick Holonyak, M. J. Ries
Rok vydání:	1995
Předmět:	Materials science Physics and Astronomy (miscellaneous) Laser diode business.industry Physics::Optics Laser law.invention Vertical-cavity surface-emitting laser Semiconductor laser theory Optics law Optical cavity Optoelectronics Spontaneous emission business Lasing threshold Quantum well
Zdroj:	Applied Physics Letters. 67:3168-3170
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.115151
Popis:	Data are presented demonstrating edge‐emitting laser diode operation of AlyGa1−yAs– GaAs–InxGa1−xAs quantum well heterostructures modified by the formation of a buried native‐oxide distributed Bragg reflecting (DBR) mirror adding vertical confinement to the longitudinal laser cavity. The bottom DBR mirror, combined with the highly reflective top p‐contact metallization (Ag), forms a thin broadband vertical cavity. The auxiliary vertical mirrors are tuned to improve the coupling of the spontaneous emission to the longitudinal lasing mode, resulting in reduced threshold currents and modified emission characteristics below threshold.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5eed37d6f51ee4b18653b12e52ec075b https://doi.org/10.1063/1.115151 Zobrazit plný text záznamu