A model of abrasive-free removal of copper films using an aqueous hydrogen peroxide–glycine solution
| Autor: | R. Shankar Subramanian, Lu Zhang |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Aqueous solution
Abrasive Kinetics Metals and Alloys chemistry.chemical_element Polishing Mineralogy Surfaces and Interfaces Copper Chemical reaction Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Chemical engineering Materials Chemistry Wafer Hydrogen peroxide |
| Zdroj: | Thin Solid Films. 397:143-151 |
| ISSN: | 0040-6090 |
| Popis: | Using a recently formulated cell model for mass transport with chemical reaction in chemical–mechanical polishing, predictions are made for the rates of chemical removal of copper from blanket films in a hydrogen peroxide solution containing glycine, and compared with experimental observations. The model requires input regarding the kinetics of the reaction, geometrical parameters, and the relative velocity between the wafer and the pad. Predictions of the removal rate as a function of the relative velocity between the wafer and the pad at three different glycine concentrations are found to be consistent with the trend displayed by experimentally measured results from a chemical–mechanical polishing tool. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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