| Autor: |
Haisheng San, Qiang Zhang, Shu Lin Yao, Ran Bin Chen |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Advanced Materials Research. 703:63-66 |
| ISSN: |
1662-8985 |
| DOI: |
10.4028/www.scientific.net/amr.703.63 |
| Popis: |
Wide-band gap semiconductor GaN is a promising material for direct-conversion nuclear micro-batteries to meet energy requirement for micro-systems. The properties of semiconductor GaN materials were studied by the interaction of beta radiation with GaN. By the Monte Carlo simulation, the trajectories of incident beta particles in GaN and the total energy deposition were obtained, which provide an optimal design inp-njunction width of GaN. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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