High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
| Autor: | C. P. Kocot, D. Collins, F. A. Kish, P.N. Grillot, T. S. Tan, E. I. Chen, I.-H. Tan, Gloria E Hofler, M. Ochiai-Holcomb, Nathan F. Gardner, M. G. Craford, Michael R. Krames, S. A. Stockman, M. Hueschen, G. Sasser, Carrie Carter-Coman, B. Loh, Herman C Chui, J. Posselt, J.-W. Huang |
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| Rok vydání: | 1999 |
| Předmět: | |
| Zdroj: | Applied Physics Letters. 75:2365-2367 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.125016 |
| Popis: | A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area (∼0.25 mm2). The TIP geometry decreases the mean photon path-length within the crystal, and thus reduces the effects of internal loss mechanisms. By combining this improved device geometry with high-efficiency multiwell active layers, record-level performance for visible-spectrum light-emitting diodes is achieved. Peak efficiencies exceeding 100 lm/W are demonstrated (100 mA dc, 300 K) for orange-emitting (λp∼610 nm) devices, with a peak luminous flux of 60 lumens (350 mA dc, 300 K). In the red wavelength regime (λp∼650 nm), peak external quantum efficiencies of 55% and 60.9% are measured under direct current and pulsed operation, respectively (100 mA, 300 K). |
| Databáze: | OpenAIRE |
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