Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs

Autor:	Yoshio Shimoida, Masakatsu Hoshi, Saichirou Kaneko, Hideaki Tanaka
Rok vydání:	2002
Předmět:	Materials science Mechanics of Materials business.industry Mechanical Engineering Electrical engineering General Materials Science Power MOSFET Condensed Matter Physics business Engineering physics Avalanche breakdown
Zdroj:	Materials Science Forum. :1207-1210
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.389-393.1207
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5e9da480c31dc089bc05768936ed5abd https://doi.org/10.4028/www.scientific.net/msf.389-393.1207 Zobrazit plný text záznamu