Vapor phase deposition of copper films with a Cu(I) β-diketiminate precursor
Autor: | John P. Wyre, Jeffery Scott Thompson, Kathryn G. Lloyd, Donald J. Brill, Lei Zhang |
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Rok vydání: | 2009 |
Předmět: |
Hybrid physical-chemical vapor deposition
Chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element Disproportionation Surfaces and Interfaces Chemical vapor deposition Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic layer deposition X-ray photoelectron spectroscopy Chemisorption Materials Chemistry Thin film |
Zdroj: | Thin Solid Films. 517:2845-2850 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2008.10.067 |
Popis: | This work demonstrates the vapor phase deposition of copper films with a volatile Cu(I) β-diketiminate precursor. X-ray photoelectron spectroscopy (XPS) depth profiles of the deposited films show only background levels of carbon and oxygen. Film thickness depends on the length of precursor pulse, but the surface roughness does not, a result that suggests a uniform deposition. XPS data for the chemisorbed copper precursor show that the copper was in both the metallic and + 1 oxidation states. Chemisorption of the Cu(I) precursor deposited a Cu(I) species. However, disproportionation of some of the chemisorbed Cu(I) precursor generated Cu(0) and a volatile Cu(II) complex, which was removed from the surface. These results are characteristic of a pulsed chemical vapor deposition. |
Databáze: | OpenAIRE |
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