Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope
| Autor: | V.H. Nguyen, R. Surdeanu, Serge Biesemans, Malgorzata Jurczak, F. Neuilly, Liesbeth Witters, Katia Devriendt, M. Masahara, Christa Vrancken, G. Van den bosch, Eddy Kunnen, G. Doornbos |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
business.industry Electrical engineering Equivalent oxide thickness Engraving Subthreshold slope Electronic Optical and Magnetic Materials Threshold voltage Gate oxide Etching (microfabrication) visual_art MOSFET visual_art.visual_art_medium Optoelectronics Microelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 28:217-219 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2007.891303 |
| Popis: | Flexibly controllable threshold-voltage (Vth) asymmetric gate-oxide thickness (Tox) four-terminal (4T) FinFETs with HfO2 [equivalentoxidethickness(EOT)=1.4 nm] for the drive gate and HfO2+thick SiO2 (EOT=6.4-9.4 nm) for the Vth-control gate have been successfully fabricated by utilizing ion-bombardment-enhanced etching process. Owing to the slightly thick Vth-control gate oxide, the subthreshold slope (S) is significantly improved as compared to the symmetrically thin Tox 4T-FinFETs. As a result, the asymmetric Tox 4T-FinFETs gain higher Ion than that for the symmetrically thin Tox 4T-FinFETs under the same Ioff conditions |
| Databáze: | OpenAIRE |
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