Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown A12O3 gate dielectric
Autor: | J. Kuzmlk, F. Gucmann, M. Tapajna, L. Valik, Karol Fröhlich, Kristína Hušeková, Š. Haščík, Dagmar Gregušová, O. Pohorelec |
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Rok vydání: | 2016 |
Předmět: |
Thermal equilibrium
Range (particle radiation) Materials science 020208 electrical & electronic engineering Gate dielectric Oxide Analytical chemistry 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Threshold voltage chemistry.chemical_compound Oxide semiconductor chemistry 0202 electrical engineering electronic engineering information engineering Metalorganic vapour phase epitaxy |
Zdroj: | 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). |
DOI: | 10.1109/asdam.2016.7805931 |
Popis: | Suppression of surface donors (SDs) in AlGaN/GaN MOS-HEMTs represents a promising approach towards realization of normally-off switching devices with high threshold voltage. In this work, density of oxide/barrier interface traps (D it ) was determined in AlGaN/GaN MOS-HEMT structures with different SDs density (Nds), resulted from HCl pre-treatment variation. The results suggest deteriorated interface quality for sample without HCl cleaning. D it was found to increase from ∼1012 to ∼1013 eV−1 cm−2 in the energy range of 0.8 to 1.1 eV below the conduction band edge for structures with and without HCl cleaning step, respectively. On the other hand, our analysis indicates negligible contribution of interface traps to observed threshold voltage in thermal equilibrium. This indicates the nature of SDs to be different from that of interface traps. |
Databáze: | OpenAIRE |
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