Low-temperature processable Sn-doped ZnO films as electron transporting layers for perovskite solar cells
Autor: | Duangmanee Wongratanaphisan, Takashi Sagawa, Pongsakorn Kanjanaboos, Koth Amratisha, Pakawat Malison, Saowalak Homnan, Pipat Ruankham |
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Rok vydání: | 2021 |
Předmět: |
Materials science
business.industry Annealing (metallurgy) Doping Energy conversion efficiency Oxide Perovskite solar cell Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Solar cell Optoelectronics Electrical and Electronic Engineering Thin film business Perovskite (structure) |
Zdroj: | Journal of Materials Science: Materials in Electronics. 32:27279-27289 |
ISSN: | 1573-482X 0957-4522 |
DOI: | 10.1007/s10854-021-07097-6 |
Popis: | Charge-transporting processable layers at a low temperature is a challenge for fabricating novel, highly stable and flexible optoelectronic devices. In fact, the crystallization of metal oxide usually needs to be processed under a high-temperature to obtain excellent semiconducting properties. In this work, Sn-doped ZnO (TZO) thin films, as electron transporting layers (ETLs) in perovskite solar cells, were prepared via sol–gel method at a temperature of less than 180 °C. The effects of annealing temperature on the properties of TZO thin films were investigated. It was found that the electrical properties of the TZO films were improved with increasing annealing temperature. In addition, an elemental composition analysis revealed that a temperature of only 140 °C sufficed for converting the precursor gel film into TZO film. The perovskite solar cell, which utilized a low-temperature TZO thin film, yielded a better power conversion efficiency than one with high-temperature ETLs (180 °C). These results imply that discovering low-temperature ETL processing for sol–gel enables good-quality metal oxide ETL, which can also be used in flexible solar cell applications. |
Databáze: | OpenAIRE |
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