Compacts of Boron-Doped Synthetic Diamond: Lowering of Synthesis Temperature and Its Effect on the Doping Level and Electrochemical Behavior
| Autor: | V. V. Elkin, Yu. V. Pleskov, M. D. Krotova, Evgeny A. Ekimov |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Synthetic diamond Doping chemistry.chemical_element Diamond 02 engineering and technology Boron carbide engineering.material 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Dielectric spectroscopy chemistry.chemical_compound chemistry Chemical engineering law Electrode Electrochemistry engineering Graphite 0210 nano-technology Boron |
| Zdroj: | Russian Journal of Electrochemistry. 53:1345-1353 |
| ISSN: | 1608-3342 1023-1935 |
| DOI: | 10.1134/s1023193517120084 |
| Popis: | Substituting of metal (Co, Ni) borides for boron carbide in the boron carbide–graphite growth system for the process of diamond growth in the region of diamond thermodynamic stability allowed lowering the synthesis temperature for the electrodes of this new electrode material―boron-doped diamond compacts―significantly (by ~1000°C) without any deterioration of their electrochemical properties. On the other hand, using of amorphous boron with finer grain as compared with the boron carbide, mixed with graphite, results in a marked increase of the electrodes’ electrochemical efficiency, due to increase in their roughness after the chemical removing of boron-containing inclusions from their surfaces. Thus obtained compact electrodes have wide potential window and low background current in supporting electrolytes, they are well reproducible. Special features of their electrochemical impedance spectroscopy are similar to those of the recently studied compacts synthesized on the basis of boron carbide. |
| Databáze: | OpenAIRE |
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