| Autor: |
Christophe Starck, M. Matabon, Leon Goldstein, R. J. Simes, J. Barrau, Jean-Yves Emery |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 120:180-183 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(92)90387-x |
| Popis: |
Quantum well structures and separate confinement heterostructure lasers based on strained quaternary Ga 1− x In x As 1− y P y well material were grown by gas source molecular beam epitaxy. The substitution of As for P allows a simultaneous control of wavelength, well width and strain in the structure. Single strained layers in InP show photoluminescence with narrow linewidth (4 to 8 meV). Broad area lasers with strained and unstrained layers have been grown with five quantum wells and identical optical confinement. The strained quaternary structure has a threshold current density of 760 A/cm 2 for L = 400 μm, an internal quantum efficiency of nearly 100%, a waveguide loss of 10 cm -1 and a high T 0 value ( T 0 = 91 K). Single-well structures have a lowest value of 240 A/cm 2 for 3 mm long devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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