Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Autor:	Rainer Minixhofer, Karl Rupp, Hajdin Ceric, Yannick Wimmer, Hubert Enichlmair, Markus Bina, Stanislav Tyaginov, Prateek Sharma, Florian Rudolf, Jong Mun Park, Tibor Grasser
Rok vydání:	2015
Předmět:	LDMOS Physics Energy distribution law Logic gate Transistor Electronic engineering Spherical harmonics Electrical and Electronic Engineering Boltzmann equation Hot carrier degradation Electronic Optical and Magnetic Materials law.invention
Zdroj:	IEEE Transactions on Electron Devices. 62:1811-1818
ISSN:	1557-9646 0018-9383
Popis:	We propose two different approaches to describe carrier transport in n-laterally diffused MOS (nLDMOS) transistor and use the calculated carrier energy distribution as an input for our physical hot-carrier degradation (HCD) model. The first version relies on the solution of the Boltzmann transport equation using the spherical harmonics expansion method, while the second uses the simpler drift-diffusion (DD) scheme. We compare these two versions of our model and show that both approaches can capture HCD. We, therefore, conclude that in the case of nLDMOS devices, the DD-based variant of the model provides good accuracy and at the same time is computationally less expensive. This makes the DD-based version attractive for predictive HCD simulations of LDMOS transistors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5e7567c765d27db402f4962d085ca901 https://doi.org/10.1109/ted.2015.2421282 Zobrazit plný text záznamu