| Autor: |
T. Arnold, Elizabeth C. Glass, Craig A. Gaw, R. Martin |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
[Reliability of Compound Semiconductors] ROCS Workshop 2006. |
| DOI: |
10.1109/rocs.2006.323406 |
| Popis: |
Freescale's true enhancement mode (EMODE) HIGFET is a high performance single supply technology used for wireless power amplifiers. It is the first technology of its kind to be produced in a high volume manufacturing environment. The EMODE HIGFET intrinsic reliability was evaluated using a conventional three temperature DC accelerated stress test. The device used for these tests has a total gate width of 0.6-mm, a gate length of 0.8-mum, a die thickness of 3-mils without through-wafer vias. The device is representative of the unit cell for larger devices and was processed using a production mask set. For targeted applications with a system life of 5-years, the first expected "failure" at 150degC for the 1-ppm level was determined to be 82-years at a 90% lower confidence level, which exceeds the reliability requirements for subscriber unit power amplifiers by a wide margin. This work demonstrates that EMODE HIGFET devices are high performance RF devices with intrinsic reliability well in excess of anticipated system requirements |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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