New SiC microcantilever electric connection array for single molecule electrical investigation
Autor: | A. L. Coutrot, R. Laloo, C. Roblin, Xavier Lafosse, D. Martrou, Ali Madouri, C. David |
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Rok vydání: | 2009 |
Předmět: |
Fabrication
Materials science business.industry Surface finish Condensed Matter Physics Curvature Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Stress (mechanics) Sputtering Electrical resistivity and conductivity Optoelectronics Electrical and Electronic Engineering Thin film business |
Zdroj: | Microelectronic Engineering. 86:1197-1199 |
ISSN: | 0167-9317 |
DOI: | 10.1016/j.mee.2009.01.069 |
Popis: | In this paper, we present an optimized fabrication process to obtain arrays of RF magnetron sputtered SiC microcantilevers showing a controlled and defined curvature. Thin amorphous SiC films with a rms roughness of 1.04nm and an electrical resistivity of [email protected] are obtained. By optimizing sputtering conditions, we have defined an in-depth stress distribution leading to an average stress value of -1.8GPa that allows obtaining reproducible cantilevers curvature value between 10.5 and [email protected] TMAH Si wet etching has also been optimized to define homogeneous curvature and to limit undercut problems. First electrical characterization at ambient atmosphere leads to an in-between cantilevers resistance of [email protected] |
Databáze: | OpenAIRE |
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