New SiC microcantilever electric connection array for single molecule electrical investigation

Autor: A. L. Coutrot, R. Laloo, C. Roblin, Xavier Lafosse, D. Martrou, Ali Madouri, C. David
Rok vydání: 2009
Předmět:
Zdroj: Microelectronic Engineering. 86:1197-1199
ISSN: 0167-9317
DOI: 10.1016/j.mee.2009.01.069
Popis: In this paper, we present an optimized fabrication process to obtain arrays of RF magnetron sputtered SiC microcantilevers showing a controlled and defined curvature. Thin amorphous SiC films with a rms roughness of 1.04nm and an electrical resistivity of [email protected] are obtained. By optimizing sputtering conditions, we have defined an in-depth stress distribution leading to an average stress value of -1.8GPa that allows obtaining reproducible cantilevers curvature value between 10.5 and [email protected] TMAH Si wet etching has also been optimized to define homogeneous curvature and to limit undercut problems. First electrical characterization at ambient atmosphere leads to an in-between cantilevers resistance of [email protected]
Databáze: OpenAIRE