Zero current switching performance of 1200 V PT-clustered insulated gate bipolar transistor
| Autor: | J.C. Nicholls, E.M. Sankara Narayanan, M. Sweet |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Electrical engineering High voltage Hardware_PERFORMANCEANDRELIABILITY Insulated-gate bipolar transistor Transient voltage suppressor Power electronics Hardware_INTEGRATEDCIRCUITS Power semiconductor device Transient (oscillation) business Energy (signal processing) Voltage |
| Zdroj: | 3rd IET International Conference on Power Electronics, Machines and Drives (PEMD 2006). |
| DOI: | 10.1049/cp:20060149 |
| Popis: | In this paper the soft-switching performance of a 1.2kV punch-through Clustered Insulated Gate Bipolar Transistor (CIGBT) is experimentally demonstrated for the first time. The CIGBT, a novel three terminal power semiconductor device, has previously been shown to give improved performance over state-of-the-art IGBT devices during inductive hard-switching conditions. Under zero current switching conditions, high transient voltage peaks have been observed in the CIGBT during turn-on. The layout design of the CIGBT has a direct impact on the magnitude of this peak voltage. Small cluster to cluster spacing causes abnormal behaviour of the device during turn-on and thus optimisation of the CIGBT design will reduce transient peaks to a minimum. Despite the transient voltage peak at turn-on, energy losses of the CIGBT are less than a comparative IGBT of the same rating while the dynamic on-state voltage is reduced by 15%. |
| Databáze: | OpenAIRE |
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