Uniform hole injection resulting in low operating current and stable high temperature cw operation in 630 nm band AlGaInP multi-quantum well laser
Autor: | Kohroh Kobayashi, Hitoshi Hotta, Kentaro Tada, F. Miyasaka |
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Rok vydání: | 2002 |
Předmět: | |
Zdroj: | Proceedings of IEEE 14th International Semiconductor Laser Conference. |
Popis: | Summary form only given. The influence of hole injection was investigated for AlGaInP MQW lasers. By improving the uniformity of the hole injection, low operating currents were obtained for 630 nm band AlGaInP MQW lasers, with stable operation at 60/spl deg/C, for the first time. |
Databáze: | OpenAIRE |
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