Nanocrystalline ITO-Sn2S3 transparent thin films for photoconductive sensor applications
Autor: | M. Khorshidifar, M. Ebrahimizadeh Abrishami, Leili Motevalizadeh, M. M. Bagheri Mohagheghi |
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Rok vydání: | 2013 |
Předmět: |
Materials science
business.industry Photoconductivity Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Nanocrystalline material Electronic Optical and Magnetic Materials Indium tin oxide Crystallinity Transmittance Optoelectronics Electrical and Electronic Engineering Thin film business Visible spectrum |
Zdroj: | Journal of Materials Science: Materials in Electronics. 24:3694-3700 |
ISSN: | 1573-482X 0957-4522 |
DOI: | 10.1007/s10854-013-1305-0 |
Popis: | Nanocrystalline indium tin oxide (ITO) film containing 5 wt% Sn was prepared on glass substrate by the spray pyrolysis technique at a substrate temperature of 500 °C. In order to enhance the photosensitivity of ITO, thiourea (CS(NH2)2 was added to the precursor to obtain the [S]/[In] proportion of 0.1, 0.2, 0.4 and 0.6. The X-ray diffraction patterns showed that beside the bixbyite structure of ITO, the characteristic peaks corresponding to Sn2S3 appeared in XRD profiles recorded for the films with [S]/[In] = 0.1 and 0.2. In addition, sulfur additive caused a considerable decline in crystallinity quality. The optical properties of the films were studied using transmittance measurements in the wavelength range 300–1,000 nm. As a result, ITO and ITO-Sn2S3 thin films were prepared with resistivity of 3.06–3.7 × 10−4 Ω cm and a transmittance of 88–91 % at the wavelength of 550 nm. Moreover, the electrical resistances of ITO and ITO-Sn2S3 films as a function of time were measured in darkness and under illumination of light in the visible range. The photoresistance results revealed that the ITO-Sn2S3 film with [S]/[In] = 0.2 was efficiently sensitive to visible light for photoconductive sensor applications, besides being high conductive and transparent. |
Databáze: | OpenAIRE |
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