HgCdTe molecular beam epitaxy technology: A focus on material properties
| Autor: | Scott M. Johnson, K. Kosai, C. A. Cockrum, Owen K. Wu, G. S. Kamath, Jeffrey M. Peterson, George R. Chapman, D. M. Jamba |
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| Rok vydání: | 1995 |
| Předmět: |
Dopant
Chemistry business.industry Doping Analytical chemistry Cadmium arsenide Carrier lifetime Dopant Activation Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials chemistry.chemical_compound Materials Chemistry Optoelectronics Infrared detector Electrical and Electronic Engineering business Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 24:423-429 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02657943 |
| Popis: | HgCdTe MBE technology is becoming a mature growth technology for flexible manufacturing of short-wave, medium-wave, long-wave, and very long-wave infrared focal plane arrays. The main reason that this technology is getting more mature for device applications is the progress made in controlling the dopants (both n-type and p-type in-situ) and the success in lowering the defect density to less than 2 x 105/cm2 in the base layer. In this paper, we will discuss the unique approach that we have developed for growing As-doped HgCdTe alloys with cadmium arsenide compound. Material properties including composition, crystallinity, dopant activation, minority carrier lifetime, and morphology are also discussed. In addition, we have fabricated several infrared focal plane arrays using device quality double layers and the device results are approaching that of the state-of-the-art liquid phase epitaxy technology. |
| Databáze: | OpenAIRE |
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