Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition
| Autor: | Jiho Chang, Hyunjae Lee, Gyung-Suk Kil, Jun-Seok Ha, Seogwoo Lee, Yong-gon Seo, Sungmin Whang, Seungwhan Park, Myungwhan Cho, Takafumi Yao, Jinsub Park, Mina Jung, Katsushi Fujii |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Photoluminescence business.industry Process Chemistry and Technology Exciton Chemical vapor deposition Molecular physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Laser linewidth Materials Chemistry Sapphire Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering Luminescence business Instrumentation Stacking fault |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:623-626 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.3388889 |
| Popis: | The authors have studied the photoluminescence (PL) intensities of a-plane (11-20) GaN films (a-GaN) as a function of x-ray rocking-curve (XRC) linewidth values measured in both c- and m-axis directions. PL intensity of well-known luminescence lines such as 3.47 eV (bound exciton emission), 3.41 eV (basal-plane stacking fault related emission), and 3.29 eV (defect induced emission) are discussed in terms of XRC linewidth values. PL intensities reveal a close relationship with XRC linewidth measured in the c-axis direction, while an unusual relationship was observed between PL intensity and XRC linewidth in the m-axis direction. Inhomogeneous strain along the m-axis direction of a-GaN film is discussed as a cause of XRC linewidth broadening, rather than the formation of structural defects. |
| Databáze: | OpenAIRE |
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