| Autor: |
Fabian M. Bufler, Wolfgang Fichtner |
| Rok vydání: |
2003 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Electron Devices. 50:2461-2466 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/ted.2003.819655 |
| Popis: |
Self-consistent fullband Monte Carlo simulations based on nonlocal empirical pseudopotential band structures including spin-orbit splitting are employed to estimate the on-current in nanoscale strained-Si p-MOSFETs. Effective gate lengths from L/sub eff/ = 75 nm down to L/sub eff/ = 25 nm and strain levels corresponding to germanium contents of up to x = 0.4 in the relaxed Si/sub 1-x/Ge/sub x/ substrate are considered. It is found that the on-current continuously increases for growing substrate germanium contents. The strain-induced performance enhancement moderately decreases with scaling, but the improvement at L/sub eff/ = 25 nm still attains 20% for x = 0.4. In contrast to strained-Si n-MOSFETs, increasing the substrate germanium content beyond x = 0.2 is essential for p-MOSFET performance improvement by strain in the sub 0.1 /spl mu/m regime. However, even for x = 0.4 the on-current in a strained-Si p-MOSFET is still smaller than in a corresponding unstrained-Si n-MOSFET. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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