| Autor: |
Stephen W. Russell, Jian Li, J. W. Strane, J. W. Mayer |
| Rok vydání: |
1992 |
| Předmět: |
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| Zdroj: |
Crucial Issues in Semiconductor Materials and Processing Technologies ISBN: 9789401052030 |
| DOI: |
10.1007/978-94-011-2714-1_31 |
| Popis: |
The stability of titanium-copper and titanium-molybdenum bimetallic layers on A12O3 was studied over the temperature range 700–900 C using vacuum furnace annealing and rapid thermal annealing (RTA). The molybdenum-titanium bilayer was stable over the entire temperature range. These films exhibited only slight intermixing of the metallic layers and had no evidence of any interaction between the bilayer and substrate. High temperature processing of copper on alumina often results in clustering and spheroidization of the copper film. However, our results showed that titanium and copper layers reacted to form a planar, polycrystalline intermetallic layer. The reacted Ti-Cu product interacted with the alumina substrate to promote adhesion, thereby suppressing spheroidization of the thin film. These results were independent of annealing profile; RTA and furnace heat treatments produced films with similar thermal stability. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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