Preparation and characterization of single crystalline In2O3 films deposited on MgO (110) substrates by MOCVD
| Autor: | Zhao Li, Jin Ma, Xianjin Feng, Wei Mi, Cansong Zhao, Caina Luan |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Band gap Process Chemistry and Technology Inorganic chemistry Oxide Analytical chemistry chemistry.chemical_element Chemical vapor deposition Substrate (electronics) Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Ceramics and Composites Transmittance Metalorganic vapour phase epitaxy Indium |
| Zdroj: | Ceramics International. 40:4203-4206 |
| ISSN: | 0272-8842 |
| Popis: | Epitaxial indium oxide (In 2 O 3 ) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500 °C to 700 °C. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In 2 O 3 film deposited at 600 °C exhibits the best crystalline quality. A clear epitaxial relationship of In 2 O 3 (110)|MgO (110) with In 2 O 3 [001]|MgO [001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In 2 O 3 films is about 3.55–3.70 eV. |
| Databáze: | OpenAIRE |
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