7T SRAM based memory cell
| Autor: | Mahbubul Haque, Kazi Fatima Sharif, Marzia Akhter Keka, Riazul Islam, Satyendra N. Biswas |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Engineering business.industry 020208 electrical & electronic engineering Transistor 02 engineering and technology 01 natural sciences Stability (probability) law.invention Memory cell Power consumption law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering Static noise margin State (computer science) Static random-access memory business |
| Zdroj: | 2017 International Conference on Innovative Mechanisms for Industry Applications (ICIMIA). |
| DOI: | 10.1109/icimia.2017.7975599 |
| Popis: | This research proposed a new design of memory cell of 7T SRAM using 16nm and 45nm (Arizona State University Predictive Technologies Model) PTM models. The memory cell provides larger static noise margin in hold state and a better read operation by controlling drain induces barrier lowering (DIBL) effect. With utilization of a single transistor, proposed cell provides stability of the data not only during successive read operation but also overwriting new data. Extensive simulation results using LTspice demonstrate the time delay, static noise margin and power consumption of the proposed cell. |
| Databáze: | OpenAIRE |
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