The Si p partial density of states in SiNx (0 < x < 2.0)
| Autor: | J. Kojnok, E. Gyarmati, H. Nickel, András Szász |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
chemistry.chemical_classification
Amorphous metal Hydrogen Condensed matter physics Analytical chemistry chemistry.chemical_element X-ray fluorescence Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Vacancy defect Materials Chemistry Ceramics and Composites Density of states Emission spectrum Electronic band structure Inorganic compound |
| Zdroj: | Journal of Non-Crystalline Solids. 155:155-164 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(93)91320-3 |
| Popis: | Some properties of non-stoichiometric amorphous silicon nitride, SiNx (0 < x < 2.0), prepared by physical vapour deposition in which hydrogen was excluded from the process, were investigated by X-ray fluorescence spectroscopy. The SiKβ and SiKα emission lines were measured. A non-bonding p-type vacancy state on the top upper Si valence band is identified up to the composition x = 1.2. This state was not observed in other studies of hydrogenated SiNx: H systems. The N 2s state derived lower valence band was split from the upper valence band with 2 eV valence band gap. The observed non-linear dependence of the Si p-band on x is inconsistent with a two-phase (Si and Si3N4) linear superposition model of this semiconducting amorphous alloy. The random bonding model is consistent with this dependence. |
| Databáze: | OpenAIRE |
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