Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors
| Autor: | I. Deretzis, P. Fiorenza, T. Fazio, E. Schilirò, R. Lo Nigro, G. Greco, G. Fisicaro, F. Roccaforte, A. La Magna |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 132:165105 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/5.0112976 |
| Popis: | [Formula: see text]/AlGaN metal-oxide-semiconductor capacitors show a hysteretic behavior in their capacitance vs voltage characteristics, often attributed to near-interface traps deriving from defects within the oxide layer. The origin as well as the structural/electronic properties of such defects are still strongly debated in the literature. Here, we use ab initio molecular dynamics and the climbing-image nudged elastic band method to show that aluminum Frenkel defects give rise to bistable trap states in disordered and stoichiometric [Formula: see text]. Based on these results, we propose a calibrated polaron model representing a distribution of individually interacting energy levels with an internal reconfiguration mode and coupled to continuous bands of carriers to explain the hysteresis mechanism in [Formula: see text]/AlGaN capacitors. |
| Databáze: | OpenAIRE |
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