Study of small-cell 3D silicon pixel detectors for the high luminosity LHC

Autor:	Currás, E., Duarte-Campderrós, J., Fernández, M., García, A., Gómez, G., González, J., Jaramillo, R., Moya, D., Vila, I., Hidalgo, S., Manna, M., Pellegrini, G., Quirion, D., Pitzl, D., Ebrahimi, A., Rohe, T., Wiederkehr, S.
Jazyk:	angličtina
Rok vydání:	2019
Předmět:	semiconductor detector: technology noise semiconductor detector: pixel CERN LHC Coll dimension: 3 efficiency electronics: readout integrated circuit electron: irradiation spatial resolution
DOI:	10.3204/pubdb-2020-00305
Popis:	Nuclear instruments & methods in physics research / A Accelerators, spectrometers, detectors and associated equipment Section A A931, 127 - 134 (2019). doi:10.1016/j.nima.2019.04.037 A study of 3D pixel sensors of cell size 50μm×50μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles. Published by North-Holland Publ. Co., Amsterdam
Databáze:	OpenAIRE
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