Hydrogen diffusion as the rate-limiting mechanism of stress development in dielectric films
| Autor: | Robert F. Cook, Michael P. Hughey |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Hydrogen Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Dielectric Chemical vapor deposition Stress (mechanics) chemistry.chemical_compound Silicon nitride chemistry Chemical engineering Diffusion process Plasma-enhanced chemical vapor deposition |
| Zdroj: | Applied Physics Letters. 85:404-406 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1773364 |
| Popis: | The kinetics of irreversible tensile stress development during annealing of dielectric films fabricated by plasma-enhanced chemical vapor deposition (PECVD) are studied, and the hypothesis of a rate-limiting hydrogen diffusion process is tested. Extra-long anneals (∼36h) with in situ stress measurements have been made: experimental observations on a silicon nitride film do not display the characteristics expected of stress development limited by diffusion. Nor do these data imply a limiting first-order reaction process. Infrared spectroscopy results indicate that the amount of bonded hydrogen decreases in proportion with the stress increase, strongly implying stress development is a result of the reduction of bonded hydrogen alone. These findings demonstrate that diffusion in PECVD films does not limit stress development; instead, it is likely governed by nonstraightforward kinetics of hydrogen bond breaking, which is followed by the rapid diffusion of product molecules. |
| Databáze: | OpenAIRE |
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