MOS-Bounded Diodes for On-Chip ESD Protection in Deep Submicron CMOS Process

Autor:	Kun Hsien Lin, Ming-Dou Ker, Che Hao Chuang
Rok vydání:	2005
Předmět:	Materials science Electrostatic discharge business.industry Electrical engineering Electronic Optical and Magnetic Materials PMOS logic Electric power transmission Miniaturization Optoelectronics Electrical and Electronic Engineering business p–n junction NMOS logic Diode Electronic circuit
Zdroj:	IEICE Transactions on Electronics. :429-436
ISSN:	1745-1353 0916-8524
DOI:	10.1093/ietele/e88-c.3.429
Popis:	New diode structures without the field-oxide boundary across the p/n junction for ESD protection are proposed. A NMOS (PMOS) is especially inserted into the diode structure to form the NMOS-bounded (PMOS-bounded) diode, which is used to block the field oxide isolation across the p/n junction in the diode structure. The proposed N(P)MOS-bounded diodes can provide more efficient ESD protection to the internal circuits, as compared to the other diode structures. The N(P)MOS-bounded diodes can be used in the I/O ESD protection circuits, power-rail ESD clamp circuits, and the ESD conduction cells between the separated power lines. From the experimental results, the human-body-model ESD level of ESD protection circuit with the proposed N(P)MOS-bounded diodes is greater than 8 kV in a 0.35-μm CMOS process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5e0cf4e835d66a77aed5e447face5f82 https://doi.org/10.1093/ietele/e88-c.3.429 Zobrazit plný text záznamu