2.25- $\mu$ m Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP
| Autor: | Yufei Li, Y. H. Shi, S. P. Xi, Yingjie Ma, Y.G. Zhang, Xue Chen, W. Y. Ji, B. Du, H. J. Tang, Jiaxiong Fang, Gu Yongwei |
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| Rok vydání: | 2017 |
| Předmět: |
02 engineering and technology
Electron 01 natural sciences law.invention Responsivity chemistry.chemical_compound 020210 optoelectronics & photonics law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Quantum tunnelling 010302 applied physics Physics business.industry Avalanche photodiode Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode Wavelength chemistry Indium phosphide Optoelectronics Atomic physics business Dark current |
| Zdroj: | IEEE Photonics Technology Letters. 29:55-58 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2016.2628761 |
| Popis: | A separated absorption and multiplication aval-anche photodiode for light detection to wavelengths as long as $2.25~\mu \text{m}$ is reported. Photons were absorbed in a metamorphic In0.75Ga0.25As layer, while the photo-generated electrons were injected into a lattice-matched In0.52Al0.48As multiplier on InP. A responsivity gain of 2.7 was attained at 2 $\mu \text{m}$ at 250 K and increased to 20 at 77 K. A primary dark current of $2.2 \times 10^{-3}$ A/cm2 at −15 V was measured at 77 K, which is dominated by dislocation defect-assisted tunneling with activation energies between 0.1 and 0.2 eV. This letter demonstrates the potentiality of extending spectral range of avalanche photodiodes in metamorphic device architecture. |
| Databáze: | OpenAIRE |
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