| Autor: |
郑有炓 Zheng You-dou, 顾然 Gu Ran, 朱顺明 Zhu Shun-ming, 叶建东 Ye Jian-dong, 顾书林 Gu Shu-lin, 朱振邦 Zhu Zhen-bang, 黄时敏 Huang Shi-min |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Chinese Journal of Luminescence. 33:449-452 |
| ISSN: |
1000-7032 |
| DOI: |
10.3788/fgxb20123304.0449 |
| Popis: |
The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor(HFET) were reported in this paper.The HFET was grown on α-plane sapphire substrate by metal-organic vapor phase epitaxy(MOVPE) technology,and was fabricated by a conventional photolithography technique combined with wet etching.The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS·mm-1 and mobility of 182 cm2·V-1·s-1 at room temperature.The property was limited by leakage current through the SiO2 gate insulator.At low temperature,the performance was improved due to the reduced leakage current. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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